Method of manufacturing dual gate oxide devices

ABSTRACT

The present invention provides method of manufacturing dual gate oxide devices. The method comprises coating photoresist on the substrate which is deposited by an oxide thin film; removing some of the photoresist by exposure and development to divide the oxide thin film into a first area to be etched and a second area coated by the remained photoresist; coating RELACS material on the remained photoresist and heating to form a protective film based on the crosslinking reaction between the RELACS material and the high molecular compounds in the photoresist; performing UV radiation to strengthen and cure the protective film; removing the oxide thin film in the first area by etching and removing the remained photoresist; and depositing again an oxide film to form an oxide layer of different thickness in the first area and the second area so as to form a dual gate oxide structure.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of China application serialno. 201310177577.5, filed May 14, 2013. All disclosure of the Chinaapplication is incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates to the field of semiconductor fabricationtechnology and particularly to a method of manufacturing dual gate oxidedevices.

BACKGROUND OF THE INVENTION

With the development of semiconductor technology, one integrated circuit(IC) chip will integrate pluralities of functional devices, whichcomprise different Field Effect Transistors (FETs) respectively. Themultiple gate oxide process has become a common method to form differentFETs in a same chip.

Nowadays, varieties of multiple gate oxide processes are provided. FIG.1A to FIG. 1D show cross-sectional views of a dual gate oxide device inthe conventional manufacturing process. As shown in FIG. 1A, the siliconsubstrate 11 with shallow trench isolations 12 formed therein andsilicon oxide thin film 13 deposited thereon is coated with photoresist14. As shown in FIG. 1B, exposure and development is applied to thephotoresist 14 so as to divide the silicon oxide thin film 13 into anarea 15 which is to be etched and an area 16 which is covered with theremained photoresist 14. Then the silicon oxide thin film 13 in the area15 is completely removed by wet etching as shown in FIG. 1C. Afterwards,as shown in FIG. 1D, the rest of the photoresist 14 is removed and thensilicon oxide is deposited again to form silicon oxide films withdifferent thickness on the silicon, oxide film 13 in areas 15 and 16, soas to form the so-called dual gate oxide structure. Then, different FETscan be manufactured in the areas 15 and 16.

In the conventional method mentioned above, the wet etching process forthe silicon oxide thin film 13 in the area 15 is performed by placingthe silicon substrate 11 with the silicon oxide thin film 13 into anacid solution such as HF. However, when the acid solution etches thesilicon oxide thin film 13, it also makes effects on the photoresist 14and forms process defects mainly including photoresist residue and SiCdeposition. Specifically, the photoresist residue is formed because thephotoresist, will be eroded by the acid solution and some of the highmolecular compounds therein will be delaminated, which will form thedefects on the silicon substrate surface. On the other hand, theformation mechanism of the SiC deposition is that with the reaction ofthe acid solution HF and the silicon oxide, SiF6 is formed, the SiF6then will react with the high molecular compounds in the photoresist toproduce SiC particles. and then the SiC deposition is formed on thesubstrate.

To solve the problems mentioned above, following methods are utilized toprevent forming photoresist defects during the wet etching process: 1)baking the photoresist layer after the exposure and development so as toincrease its density, thereby making the acid solution difficult toimmerse into the gaps between the high molecular compounds to react withthe compounds and form the defects; 2) performing UV curing after theexposure and development to form cross-linked bond with the highmolecular compounds on the surface of the photoresist, which can improvethe erosion-resisting ability of the photoresist to the acid solution.

However, there still exist some problems to be solved in theconventional methods of preventing photoresist defects mentioned above.In the first method, the baking temperature cannot be too high and thebaking time cannot be too long, otherwise the photolithography patternsof the photoresist will be deformed, which may further have negativeeffects on the throughput. Moreover, the density of the bakedphotoresist layer may not meet the requirements of erosion-resistance toacid solutions due to the temperature and time limitations. In thesecond method, the UV curing process which is performed after thephotolithography process may result in contractions in the thickness ofthe photoresist layer and the linewidth of the photoresist pattern.Generally, the contraction rate of the photoresist thickness can be 15%to 25%, and the linewidth can be reduced by 10˜30 nm compared with thatafter the exposure and development process. As a result, the linewidthas well as the quality of the dual gate oxide device to be formed latermay be affected.

SUMMARY OF THE INVENTION

Accordingly, at least one object of the present invention is to providea method of manufacturing dual gate oxide devices which can preventphotoresist defects forming during the processes and minimize thenegative effects on the device linewidth by the processes.

To achieve these and other advantages and in accordance with theobjective of the invention, as embodied and broadly described herein,the invention provides a method of manufacturing dual gate oxide devicesincluding the following steps:

Step S01, coating photoresist on a substrate which is deposited by anoxide thin film;

Step S02, removing some of the photoresist by exposure and developmentto divide the oxide thin film into a first area which is to be etchedand a second area which is coated by the remained photoresist;

Step S03, coating Resolution Enhancement Lithography Assisted byChemical Shrink (RELACS) material on the remained photoresist andheating so as to form a protective film based on the crosslinkingreaction between the RELACS material and the high molecular compounds inthe photoresist;

Step S04, performing UV radiation to the photoresist surface treated bythe step S03 to strengthen and cure the protective film;

Step S05, removing the oxide thin film in the first area by an etchingprocess, and removing the remained photoresist;

Step S06, depositing again an oxide film to form oxide films ofdifferent thickness in the first area and the second area so as to forma dual gate oxide structure.

Furthermore, the photoresist is applicable in I-line or 248 nm or 198 nmor EUV lithography process.

Furthermore, the RELACS material is water soluble polymer materialcomprising alkylamino groups. Preferably, the water soluble polymermaterial is acrylate comprising alkylamino groups or methacrylatecomprising alkylamino groups.

Furthermore, the heating temperature in the step S03 is 80° C. to 180°C., the heating time is 15 seconds to 300 seconds. Preferably. theheating temperature is 90° C. to 170° C., the heating time is 30 secondsto 120 seconds.

Furthermore, the wavelength of the UV radiation is in the range from 280nm to 330 nm, the UV radiation temperature is 100° C. to 180° C.

Furthermore, the oxide layer is a silicon oxide layer, the substrate isa silicon substrate.

Furthermore, the method further comprises removing the unreacted RELACSmaterial after the step S03.

Furthermore, the unreacted RELACS material is removed by deionized wateror deionized water solution containing surfactant,

Furthermore, a same imaging machine is utilized in the step S02, thestep S03 and the step S04.

Furthermore, the etching process in the step SOS is a wet etching,process.

The method of manufacturing dual gate oxide devices in the presentinvention can effectively enhance the density of the photoresist beforethe etching, process so, as to improve its erosion-resistance to acidsolutions and reduce the risk of forming photoresist defects during theetching process. Additionally, the linewidth of the photoresist patternincreases 10 nm to 20 nm by the chemical curing treatment utilizing theRELACS material, which will, compensate the 10 nm to 30 nm linewidthdecrease of the photoresist pattern due to the UV radiation, so that theeffects on the device linewidth by the manufacturing process can beminimized.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the advantages and principles of the invention, inwhich:

FIG. 1A to FIG. 1D are cross-sectional views of a dual gate oxide devicein the conventional manufacturing process;

FIG. 2A to FIG. 2E is a cross-sectional views of a dual gate oxidedevice in the manufacturing process of the present invention.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The method of manufacturing dual gate oxide devices of the presentinvention will be described in further details hereinafter with respectto the embodiments and the accompanying drawings.

The present invention is described with reference to the attachedfigures, wherein like reference numerals are used throughout the figuresto designate similar or equivalent elements. The figures are not drawnto scale and they are provided merely to illustrate the invention. Itshould be understood that numerous specific details, relationships, andmethods are set forth to provide an understanding of the invention. Oneskilled in the relevant art, however, will readily recognize that theinvention can be practiced without one or more of the specific detailsor with other methods. In other instances, well-known structures oroperations are not shown in detail to avoid obscuring the invention.

Referring to FIG. 2A to FIG. 2E, in one embodiment of the present,invention, the method of manufacturing dual gate oxide comprises thefollowing steps:

In the step S01, the substrate 21 having shallow trench isolations 22formed therein and an oxide layer 23 deposited thereon is coated with aphotoresist 24, as shown in FIG. 2A. In the embodiment, the substrate 21is a silicon substrate, the oxide layer 23 is a silicon oxide layer, thephotoresist 24 is applicable in the I-line lithography process.

In the step 102, some of the photoresist 24 is removed by exposure anddevelopment, thus to divide the oxide layer 23 into a first area 25 anda second area 26 as shown in FIG. 2B. Wherein, the first area 25 isexposed to be etched later and the second area 26 is covered by theremained photoresist 14.

In the step S03, the remained photoresist 14 is coated by ResolutionEnhancement Lithography Assisted by Chemical Shrink (RELACS) materialand a heat treatment is applied thereafter. The heat treatment cures thephotoresist pattern, and triggers the crosslinking reaction between theRELACS material and the high molecular compounds in the photoresist 24,thereby curing the photoresist surface chemically and forming aprotective film 27 on parts of the photoresist 24 surface. Preferably,the unreacted RELACS material is removed then, as shown in FIG. 2C.Wherein, in the embodiment, the RELACS material is the RELACS productR607 or SH-114 provided by AZ Electronic Materials USA Corp., which iscommercially available; the heat treatment is applied at 120° C. for 60seconds; and the unreacted RELACS material is removed by deionizedwater.

In the step S04, UV radiation is applied to the photoresist 24 treatedafter the step S03 to strengthen and cure the photoresist 24 surfacefurther, and then the protective film 27 will form on the whole surfaceof the photoresist 24. Since the chemical curing treatment by the RELACSmaterial increases the photoresist pattern linewidth by 10 to 20 nmwhile the UV curing treatment by the UV radiation decreases the patternlinewidth by 10 to 30 nm, the linewidth deformation can be compensatedand the effects on the linewidth of the device to be formed later by themanufacturing processes can be minimized.

In the step S05, as shown in FIG. 2E, the oxide film in the first area25 is removed completely by an etching process. The etching process is awet etching, process in the embodiment.

In the step S06, the remained photoresist is removed and an oxide thinfilm is deposited again thereafter. Thus an oxide layer having differentthickness to get a dual gate oxide structure is formed, as shown in FIG.2E.

Then, in the step S07, different TFTs are manufactured according to thedual gate oxide structure in the first and second areas 25, 26.

In the practical application, the photoresist 24 can also be applicablein the 248 nm or 193 nm or EUV lithography process; the RELACS materialcan be other soluble polymer materials comprising alkylamino groups,preferably to be acrylate comprising alkylamino groups or methacrylatecomprising alkylamino groups, such as the following compound I and IIdisclosed by U.S. Pat. No. 7,745,077 and U.S. Pat. No. 7,923,200respectively:

Wherein, in composition I, R1 to R5 are independently selected fromhydrogen and C₁ to C₆ alkylthe, and W is C₁ to C₆ alkyl; in compositionII, R1 is independently selected hydrogen, C₁-C₄ alkyl, C₁-C₆ alkylalcohol, hydroxy(OH), amine (NH2), carboxylic acid, and amide (CONH2),

represents the attachment to the polymer, m=1-6, and n=1-4. The heatingtemperature in the step S03 can be in the range from 80° C. to 180° C.,and preferably to be 90° C. to 170° C.; the heating time can be in therange from 15 seconds to 300 seconds, and preferably to be 30 seconds to120 seconds. The wavelength of the UV radiation can be in the range from280 nm to 330 nm, and the UV radiation temperature can be 100° C. to180° C. The process conditions of the heat treatment and the UVradiation can be adjusted according to actual requirements. In addition,Deionized water solution containing surfactant can also be applied toremove the unreacted RELACS material in the step S03. Furthermore, inthe step S02, the step S03 and the step S04, a same imaging machine isutilized to perform the processes.

It should be understood that the invention is focus on the curing of thephotoresist through chemical curing and UV curing, so as to avoid thenegative effects caused by the conventional manufacturing processes,such as the erosion of the photoresist and the device. Therefore, otherwell -known specific processes such as the formation of the shallowtrench isolations, the exposure and development process, the removing ofthe remained photoresist, the coating process, the UV radiation, the wetetching technology, the deposition process etc, which are not shown indetail, can all refer to the conventional processes.

Although the present invention has been disclosed as above with respectto the preferred embodiments, they should, not be construed aslimitations to the present invention. Various modifications andvariations can be made by the ordinary skilled in the art withoutdeparting the spirit and scope of the present invention. Therefore, theprotection scope of the present invention should be defined by theappended claims.

1. A method of manufacturing dual gate oxide devices comprising thefollowing steps: Step S01, coating photoresist on a substrate which isdeposited by an oxide thin film; Step S02, removing some of thephotoresist by exposure and development to divide the oxide thin filminto a first area which is to be etched and a second area which iscoated by the remained photoresist; Step S03, coating ResolutionEnhancement Lithography Assisted by Chemical Shrink (RELACS) material onthe remained photoresist and heating, so as to form a protective filmbased on the crosslinking reaction between the RELACS material and thehigh molecular compounds in the photoresist; Step S04, performing ITVradiation to the photoresist surface treated by step S03 to strengthenand cure the protective film; Step S05, removing the oxide thin film inthe first area by an etching process and removing the remainedphotoresist Step S06, depositing again an oxide film to form an oxidelayer of different thickness in the first area and the second area so asto form a dual gate oxide structure.
 2. The method of manufacturing dualgate oxide devices according to claim 1, wherein the photoresist isapplicable in I-line or 248 nm or 198 nm or EUV lithography process. 3.The method of manufacturing dual gate oxide devices according to claim1, wherein the RELACS material is water soluble polymer materialcomprising alkylamino groups.
 4. The method of manufacturing dual gateoxide devices according to claim 3, wherein the water soluble polymermaterial is acrylate comprising alkylamino groups or methacrylatecomprising alkylamino groups.
 5. The method of manufacturing dual gateoxide devices according to claim 1, wherein the heating temperature inthe step S03 is 80° C. to 180° C., the heating time is 15 seconds to 300seconds.
 6. The method of manufacturing dual gate oxide devicesaccording to claim 5, the heating temperature is 90° C. to 170° C., theheating time is 30 seconds to 120 seconds.
 7. The method ofmanufacturing dual gate oxide devices according to claim 1, wherein thewavelength of the UV radiation in the step S04 is in the range from 280nm to 330 nm. the UV radiation temperature is 100° C. to 180° C.
 8. Themethod of manufacturing dual gate oxide devices according to claim 1,wherein the oxide layer is a silicon oxide layer, the substrate is asilicon substrate.
 9. The method of manufacturing dual gate oxidedevices according to claim 1, wherein the method further comprisesremoving the unreacted RELACS material after the step S03.
 10. Themethod of manufacturing dual gate oxide devices according to claim 9,wherein the unreacted RELACS material is removed by deionized water ordeionized water solution containing surfactant.
 11. The method ofmanufacturing dual gate oxide devices according to claim 1, wherein asame imaging machine is utilized in the step S02, step S03 and step S04.12. The method of manufacturing dual gate oxide devices according toclaim 1, wherein the etching process in the step S05 is a wet etchingprocess.
 13. The method of manufacturing dual gate oxide devicesaccording to claim 1, wherein the protective film is formed on parts ofthe photoresist surface by the step S03; the protective film is formedon the whole photoresist surface by the step S04.